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KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
Memory Cell With Resistance-Switching Layers
2013

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KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
Memory Cell With Resistance-Switching Layers
2013

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KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
Memory Cell With Resistance-Switching Layers
2013

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BANDYOPADHYAY ABHIJIT CHEN YUNG-TIN FU CHU-CHEN JAYASEKARA WIPUL PEMSIRI KAI JAMES KREUPL FRANZ MAKALA RAGHUVEER S RABKIN PETER SAMACHISA GEORGE ZHANG JINGYAN
[EN] Composition of memory cell with resistance-switching layers
2013

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FU CHU-CHEN, KREUPL FRANZ, NIAN YIBO
[EN] MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
2013

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KREUPL FRANZ, SHRIVASTAVA RITU
[EN] Memory cell with resistance-switching layers and lateral arrangement
2013

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KREUPL FRANZ PING ER-XUAN XU HUIWEN ZHANG JINGYAN
[EN] Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
2013

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KREUPL FRANZ, DE MAKALA RAGHUVEER S, US SEKAR DEEPAK CHANDRA, US
Bottom electrodes for use with metal oxide resistivity switching layers
2013

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BANDYOPADHYAY ABHIJIT KREUPL FRANZ LI XIAO MIHNEA ANDREI
Chinese [EN] Carbon/tunneling-barrier/carbon diode
2013

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KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
KR20130097139 (A) COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS
2013