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Huang, Y.; Erlbacher, T.; Buettner, J.; Wachutka, G.
A Trade-off Between Nominal Forward Current Density and Surge Current Capability for 4,5 kV SiC MPS Diodes
Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs
2016

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Huang, Y.; Wachutka, G.
Comparative Study of Contact Topographies of 4,5 kV SiC MPS Diodes for Optimizing the Forward Characteristics
117-120
Proceedings of Simulation of Semiconductor Processes and Devices
2016

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Basler, V.; Basler, T.; Pertermann, E.; Baburske, R.; Lutz, J.; Wachutka, G.
Compact PIN-Diode Model including Dynamic Avalanche and Lifetime Control in MATLAB
2016

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Toechterle, C.; Pfirsch, F.; Sandow, C.; Wachutka, G.
Influence of Quasi-3D Filament Geometry onf the Latch-Up Threshold of High-Voltage Trench-IGBTs
177 - 180
Proceedings of Simulation of Semiconductor Processes and Devices
2016

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Behlert, R.; Schrag, G.; Wachutka, G.; Wieland, R.; Kutter, C.
Design of an Integrated Piezoelectric Micro-Flapper Based on Bionic Principles
79 - 82
Proceedings of Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS
2016

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Schrag, G.; Kuenzig, T.; Dehe, A.
Enhanced Design of Microsystems by Combining Lumped and Distributed System-level Models
61-65
Proceedings of DTIP 2016
2016, Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS
IEEE
2016

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Basler, V.; Hoelzl, W.; Wachutka, G.
Physical Modeling and High-Fidelity Simulation of the Transient Behavior of Multiply-Contacted Power Busbars
543-549
PCIM Europe 2016, 10 - 12 May
VDE Verlag GmbH
2016