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- Document type:
- Patentanmeldung
- Patent application number:
- TW 201212319 A
- Inventor:
- BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
- Assignee:
- BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
- Title:
- TW 201212319 A Composition of memory cell with resistance-switching layers
- Patent office:
- TW
- Publication date application:
- 16.03.2012
- Year:
- 2012
- Language:
- Sonstige
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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